■  Microwriter ML3在高灵敏压力传感器阵列制备方面的应用

目前，基于渗流效应或接触电阻模型的压力传感器存在着灵敏度不够高、难以制备、难以推广应用等问题。着眼于此，复旦大学武利民教授团队发展出了一种新的超高灵敏度传感薄膜材料（主要基于一种空心带刺纳米结构碳球与聚甲基硅氧烷弹性体（PDMS）），结合理论计算，发现该材料体系在极低浓度导电载体（≤1.5 wt%的碳球）下，受微小外力作用，即通过F-N隧穿效应，产生大的电流密度，从而实现了对外界压力的高灵敏度响应。更进一步，结合传统微加工制程的工艺方法，实现了基于此种新结构的传感器阵列的制备。利用所制备的传感器阵列，通过显示分辨率、形状和动态传感能力，可以检测玩具蚂蚁、小球和一些具有不同接触形状的物体。

图1 制备所得传感器阵列的图像、电学特性、对不同形状微小物品的探测

引用文献：Lan Shi, Zhuo Li, Min Chen, Yajie Qin, Yizhou Jiang & Limin Wu. Quantum effect-based flexible and transparent pressure sensors with ultrahigh sensitivity and sensing density.  Nat Commun 11, 3529 (2020).

■  无掩模光刻系统Microwriter在微流控芯片制备方面的应用

众所周知，研究单细胞的机械表型能够提供许多潜在的诊断应用。细胞是黏弹性的，它们对外加应力的响应高度依赖于外界激励的大小和时间。微流体可以用来测量细胞在各种流动条件下的变形能力，操作两种不同的流动状态（剪切和惯性），这两种流动状态可以揭示亚细胞组分产生的微弱的机械特性。F. J. Armistead等人自主设计和制备了专用的微流控器件，通过设计和调控一系列的流动状态，研究了三种结直肠癌（CRC）细胞系的变形能力。在本工作当中，微流控器件的制备是采用标准的快速成型技术和软光刻技术，其中，微流控器件的制备使用了英国Durham Magneto Optics公司生产的Microwriter无掩膜光刻机。

图1 a. 微流控器件中通道交叉区域的示意图；b. 细胞形变前后的示意图以及相应的几何参数；c. 三种细胞系的示意图；d. 叠加的亮场图像，展示了一个单细胞进入（从左侧）微流控器件中的停滞点（SP），并由器件底部退出的过程；e. SW480、HT29、SW620、HL60四种细胞系在不同力学作用下的形变实例。

引用文献：fern J. Armistead, Julia Gala De pablo, Hermes Gadêlha, Sally A. peyman, Stephen D. Evans. Physical Biomarkers of Disease progression: on-chip Monitoring of changes in Mechanobiology of colorectal cancer cells. Sci. Rep., (2020) 10:3254.

■  Microwriter激光直写光刻机在二维无机分子晶体器件制备方面的应用

由于独特物理、化学性质，二维无机分子晶体（two-dimensional inorganic molecular crystals, 2DIMCs）有望应用于下一代半导体工业、光电器件、柔性器件、传感、催化和智能科技等领域，因而受到了越来越多的关注。制备大面积、高质量的二维无机分子晶体是目前限制其进一步广泛应用的巨大挑战。针对这一问题，华中科技大学翟天佑教授课题组成功制备出薄至单分子层（约0.64nm）的二维Sb₂O₃无机分子晶体。通过理论与计算结合，详细分析了材料的合成机制。更进一步地，通过制备基于二维无机分子晶体的原型器件及系统的测试，展示了未来二维分子晶体在电子、光电以及相变器件中的应用可行性。文中，作者使用Microwriter ML无掩模光刻系统，制备了基于二维无机分子晶体的器件。

图中所示为α相和β相的Sb₂O₃晶体器件的IV特性曲线，其中右下的图片为Sb₂O₃器件的光学显微示意图。

引用文献：Wei Han, Pu Huang, Liang Li, Fakun Wang, Peng Luo, Kailang Liu, Xing Zhou, Huiqiao Li, Xiuwen Zhang, Yi Cui, Tianyou Zhai. Two-dimensional inorganic molecular crystals. Nature Comm. | (2019) 10:4728.

■  无掩膜光刻系统Microwriter在TMDCs材料研究方面的应用

原子层级的过渡金属二硫化物（TMD）是近些年的重要研究热点。然而，目前绝大部分的器件都是基于层间剥离来获取金属硫化物层，这样只能实现微米级的制备。针对此问题，复旦大学包文中教授课题组提出一种利用化学气相沉积（CVD）制备多层MoS₂薄层，进而改善所制备器件的相关性能。采用四探针法测量证明接触电阻降低一个数量级。进一步，基于该法制备的连续大面积MoS₂薄层，采用小型无掩膜光刻直写系统（MicroWriter ML3）构筑了顶栅极场效应晶体管（FET）阵列。研究表明其阈值电压和场效应迁移率均有明显的提升，平均迁移率可以达到70 cm²V^-1s^-1，可与层间剥离法制备的MoS₂ FET最好结果相媲美。本工作创制了一种规模化制备二维TMD功能器件和集成电路应用的有效方法。 

图1 利用Microwriter制备的大面积规模级MoS₂ FET阵列，及其场效应迁移率和阈值电压的分布性测量结果。

引用文献：Hu Xu, Haima Zhang, Zhongxun Guo, Jianlu Wang, Weida Hu, David Wei Zhang, Wenzhong Bao, Peng Zhou, “High-Performance Wafer-Scale MoS2 Transistors toward Practical Application”. Small, 2018, 1803465(1-9).

■  无掩膜光刻系统Microwriter在TMDCs双栅器件制备方面的应用

利用化学气相沉积（CVD）制备半导体型过渡金属二硫化物（TMD）是一种制备半导体器件的新途径，然而实现连续均匀的多层TMD薄膜制备仍然需要克服特殊的生长动力学问题。复旦大学包文中教授课题组利用多层堆叠（layer-by-layer）及转移工艺，制备出均匀、无缺陷的多层MoS₂薄膜。同时，利用无掩膜光刻直写系统（MicroWriter）在其基础上制备场效应晶体管（FET）器件。分别实现1层、2层、3层和4层MoS₂ FET的制备，并深入研究不同条件下器件的迁移率变化，最终发现随着MoS₂堆叠层数的增加，电子迁移率随之增加，但电流开关比反而减小。综合迁移率和电流开关变化，2层/3层MoS₂ FET是最优设计器件。此外，双栅极结构也被证明可以改善对多层MoS₂通道的静电控制。 

图1 (a) 背栅极MoS₂ FET阵列制备流程示意；(b) 利用无掩膜激光直写系统（MicroWriter）制备的MoS₂ FET器件的表面光学形貌（利用MicroWriter特有的虚拟掩膜对准技术(VMA)，可以高效直观地在感兴趣区域实现图形曝光）；(c-f) 不同结构的MoS₂ FET器件的输出特性及转移特性测量结果。

引用文献：Simeng Zhang, Hu Xu, Fuyou Liao, Yangye Sun, Kun Ba, Zhengzong Sun, ZhiJun Qiu, Zihan Xu, Hao Zhu, Lin Chen, Qingqing Sun, Peng Zhou, Wenzhong Bao, David Wei Zhang. Wafer-scale transferred multilayer MoS2 for high performance field effect transistors. Nanotechnology. 2019, 30, 174002.

0.4 μm特征线宽曝光结果

直写分辨率1μm

直写分辨率0.6μm

微电极制备

微结构制备

微流通道制备

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Microwriter ML3-中文单页.pdf